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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD732 description collector-emitter breakdown voltage- : v (br)ceo = 120v (min) high current capability complement to type 2sb696 applications designed for af power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 6 v i c collector current-continuous 8 a i cm collector current-peak 12 a p c collector power dissipation @t c =25 80 w t j junction temperature 150 t stg storage temperature range -40~150 isc website www.iscsemi.cn www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD732 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 5ma; r be = 120 v v (br)cbo collector-base breakdown voltage i c = 5ma; i e = 0 150 v v (br)ebo emitter-base breakdown voltage i e = 5ma; i c = 0 6 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.5a b 0.6 v v be (on) base-emitter on voltage i c = 1a; v ce = 5v 1.5 v i cbo collector cutoff current v cb = 80v; i e = 0 0.1 ma i ebo emitter cutoff current v eb = 4v; i c = 0 0.1 ma h fe dc current gain i c = 1a; v ce = 5v 40 320 f t current-gain?bandwidth product i c = 1a; v ce = 5v 15 mhz ? h fe classifications c d e f 40-80 60-120 100-200 160-320 isc website www.iscsemi.cn www.iscsemi.cn |
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